Abstract
This paper presents Read Margin analysis for large SRAM arrays with a fast test method that even can be realized in dual-V DD product chips. Classical Static Noise Margin (SNM) is mostly suitable for single-cell simulation. Read Margin (RM) measurement allows analysis of large arrays and correlates to SNM, but requires a dedicated teststructure and long measurement time. The presented method analyzes the flipping of cells over varying supply voltage. The stability of large arrays can be characterized in read as well as in hold state depending on the state of the access transistors. Applying this method, the impact of Negative Bias Temperature Instability (NBTI) is demonstrated on both Read and Hold Margin in a 65 nm low power technology.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
