Abstract
A metal–semiconductor–metal photoconductive detector was fabricated on c-axis preferred oriented Ga-doped ZnO (ZnO:Ga) thin film prepared on quartz by radio-frequency magnetron sputtering. With a 10 V bias, a responsivity of about 2.6 A/W at 370 nm was obtained in the ultraviolet region. The photocurrent increases linearly with incident power density for more than two orders of magnitude. The transient response measurement revealed photoresponse with a rise time of 10 ns and a fall time of 960 ns, respectively. The results are much faster than those reported in photoconductive detectors based on unintentionally doped n-type ZnO films.
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