Abstract
A new and exciting resistive gas sensor based on Ni/InGaN/GaN heterostructure, grown by plasma-assisted molecular beam epitaxy, has been developed to efficiently detect acetone very rapidly at low temperature. Non-rectifying I–V characteristics of epitaxially relaxed InGaN with Ni contact have been revealed at 373 K. An incremental current of $11.74~\mu \text{A}$ has been found at 373 K with the exposure of 100 ppm of acetone vapor at an operating bias of 0.4 V. Sensitivity has been obtained from transient response curves. Most importantly, very fast response/recovery characteristics with good baseline recovery have been witnessed. The response time and recovery time have been found to be ~7.6–8.4 s and ~4.5–19.1 s. A possible explanation, including Langmuir adsorption–desorption isotherm, has also been discussed.
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