Abstract
2.5 kV/150 A PiN diode is subjected to the local lifetime control using platinum diffusion from implanted layer (Pt6+: energy 19 MeV, dose 5middot1012 cm-2). The diffusion is controlled by radiation defects resulting from helium implantation (He 2+: energy 10 MeV, dose 1middot1012 cm-2 ). This process is proved to locally control excess carrier lifetime at the same level as that of platinum diffusion from PtSi anode contact. The electrical characteristics (DLTS, forward and reverse I-V, OCVD, reverse recovery) are presented. Reverse recovery waveforms up to the DC line voltage of 2 kV of the novel devices are compared with those of standard helium and combined helium-electron implantation. The novel technique gives lower leakage current, similar forward voltage drop and charge from dynamic avalanche
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