Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs

Abstract

Ferroelectric field-effect transistors (FeFETs) based on HfO₂ are promising for low-power and high-speed non-volatile memory devices. However, most reported FeFETs show limited write endurance and significant read-after-write delay due to parasitic charge trapping. Here we show that n-type FeFETs with SiN_<i>x</i> interfacial layer and high write endurance also exhibit immediate read-after-write behavior due to negligible charge trapping. This overcomes one of the major challenges faced by FeFET technologies today.