Year-end Sale % OFF 
Abstract
Ferroelectric field-effect transistors (FeFETs) based on HfO<sub>2</sub> are promising for low-power and high-speed non-volatile memory devices. However, most reported FeFETs show limited write endurance and significant read-after-write delay due to parasitic charge trapping. Here we show that n-type FeFETs with SiN<sub><i>x</i></sub> interfacial layer and high write endurance also exhibit immediate read-after-write behavior due to negligible charge trapping. This overcomes one of the major challenges faced by FeFET technologies today.
Accepted Version
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
