Abstract
This work demonstrates that conventional thin-oxide EEPROM cells can be programmed (erased) in the nanosecond time scale with voltages lower than 18 V and still feature data retention times of the order of a few hours after 100 K program/erase (P/E) cycles. Our results suggest that thin-oxide nonvolatile (NV) memory devices can be suitable for fast read/write dynamic applications, at least when high cycling endurance is not a primary specification.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
