Abstract
In order to reduce the environmental harm of silicon cutting waste (SCW) and increase the value of the plant fiber, we reported a novel method for swiftly preparing ultrafine SiC crystals by spark plasma-assisted silicon–carbon reaction using pretreatment SCW and sisal fibers as raw materials. At 1650 °C, ultrafine SiC crystals with approximately 200 nm grain size were produced. The ultrafine SiC crystals mainly possessed a lattice fringe spacing of 0.25 nm, equivalent to the inter-planar distance between the 3C–SiC (111) planes. The photoluminescence spectrum of the ultrafine SiC crystals exhibited a significant blue shift, indicating that theses crystals are highly valuable for potential future applications in blue-violet emitting devices.
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