Fast preparation of (111)‐oriented β‐SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H2

Abstract

Abstract(111)‐oriented β‐SiC films were prepared by laser chemical vapor deposition using a diode laser (wavelength: 808 nm) from a single liquid precursor of hexamethyldisilane (Si(CH3)3–Si(CH3)3, HMDS) without H2. The effects of laser power (PL), total pressure (Ptot) and deposition temperature (Tdep) on the microstructure, carbon formation and deposition rate (Rdep) were investigated. β‐SiC films with carbon formation and graphite films were prepared at PL ≥ 170 W and Pto ≥ 1000 Pa, respectively. Carbon formation strongly inhibited the film growth. β‐SiC films without carbon formation were obtained at Ptot = 400‐800 Pa and PL = 130‐170 W. The maximum Rdep was about 50 μm·h−1 at PL = 170 W, Ptot = 600 Pa and Tdep = 1510 K. The investigation of growth mechanism shows that the photolytic of laser played an important role during the depositions.