Abstract
Singly and doubly doped ZnS phosphors have been synthesized in the laboratory. The crystal structure has been determined by X-ray diffraction (XRD) studies. Laser-induced photoluminescence has been observed in ZnS-doped phosphors when these were excited by the pulsed UV N 2 laser radiation at liquid nitrogen temperature (77 K). The temperature dependence of lifetimes, trap-depths and decay constant values were investigated for quencher impurities doped ZnS:Mn phosphors. The lifetimes of the orange emission from 4T 1– 6A 1 transition of Mn 2+ ions has been found to decrease at liquid nitrogen temperature. Due to downconversion phenomenon fast phosphorescence /fluorescence emission in the visible region is recorded in milliseconds time domain for ZnS:Mn while in case of ZnS:Mn, X (X=Fe, Co and Ni) phosphors lifetime reduces to nanoseconds time domain. A thermally activated carrier-transfer model has been proposed to explain the observed abnormal temperature behaviour of the lifetimes in ZnS:Mn, X (X=Fe, Co and Ni) phosphors. The high efficiency and fast recombination times observed in doped ZnS phosphors make these materials very attractive for optoelectronic applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
