Abstract
Phase-Change Memory Random access memory (RAM) devices that rely on phase changes are primarily limited by the speed of crystallization. Rao et al. combined theory with a simple set of selection criteria to isolate a scandium-doped antimony telluride (SST) with a subnanosecond crystallization speed (see the Perspective by Akola and Jones). They synthesized SST and constructed a RAM device with a 700-picosecond writing speed. This is an order of magnitude faster than previous phase-change memory devices and competitive with consumer dynamic access, static random access, and flash memory. Science , this issue p. [1423][1]; see also p. [1386][2] [1]: /lookup/doi/10.1126/science.aao3212 [2]: /lookup/doi/10.1126/science.aaq0476
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