Abstract
The x-ray Bragg diffraction intensity profile for a model strain-compensated structure consisting of a thin SiGe alloy layer grown on a thick Si substrate is derived using a Laplace transform interpretation of the kinematical approximation of x-ray diffraction theory. It is shown that in the case of fully strain-compensated crystals a simplified x-ray phase-retrieval technique can be applied to determine the alloy composition from this x-ray diffraction data. An experimental intensity profile from an almost perfectly unstrained SiGe:C/Si structure is analyzed using this method.
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