Fast neutron irradiation tests of flash memories used in space environment at the ISIS spallation neutron source

C Andreani,G Gorini,R Mancini,R Senesi,M Bagatin,P Picozza,C Cazzaniga,C D Frost,A Paccagnella,S Gerardin,M Sarno

doi:10.1063/1.5017945

Abstract

This paper presents a neutron accelerated study of soft errors in advanced electronic devices used in space missions, i.e. Flash memories performed at the ChipIr and VESUVIO beam lines at the ISIS spallation neutron source. The two neutron beam lines are set up to mimic the space environment spectra and allow neutron irradiation tests on Flash memories in the neutron energy range above 10 MeV and up to 800 MeV. The ISIS neutron energy spectrum is similar to the one occurring in the atmospheric as well as in space and planetary environments, with intensity enhancements varying in the range 108- 10 9 and 106- 10 7 respectively. Such conditions are suitable for the characterization of the atmospheric, space and planetary neutron radiation environments, and are directly applicable for accelerated tests of electronic components as demonstrated here in benchmark measurements performed on flash memories.

Highlights

Fast neutron irradiation tests of flash memories used in space environment at the ISIS spallation neutron source
The study of Single Event Effects (SEE), occurring when a highly energetic charged or neutral particle causes a disruption of the correct operation of an integrated circuit, is of great importance to assess the robustness of electronic devices and provide indications to protect them from environmental ionizing radiation
Results are shown in Figure 2: Single Event Upset (SEU) cross sections are consistent with previous measurements[14,15] and in agreement with a mechanism based on charge loss from the floating gate,[16] and to a much smaller extent charge trapping in the tunnel oxide.[17,18]

Summary

Introduction

The study of Single Event Effects (SEE), occurring when a highly energetic charged or neutral particle causes a disruption of the correct operation of an integrated circuit, is of great importance to assess the robustness of electronic devices and provide indications to protect them from environmental ionizing radiation. Fast neutron irradiation tests of flash memories used in space environment at the ISIS spallation neutron source

Results

Conclusion