Abstract
We study free carrier dynamics in gallium arsenide (GaAs) photonic crystal cavities with resonances near the material band edge. We show that low estimated switching energy of 3 femtojoules can be achieved for 45% transmission contrast. We also present an architecture for larger photonic circuits comprising of large arrays of these cavities.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have