Abstract
We study free carrier dynamics in gallium arsenide (GaAs) photonic crystal cavities with resonances near the material band edge. We show that low estimated switching energy of 3 femtojoules can be achieved for 45% transmission contrast. We also present an architecture for larger photonic circuits comprising of large arrays of these cavities.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
