Abstract
Commercial SiC ceramics were joined by electric field-assisted sintering technology using a Ti3SiC2 (TSC) tape film. A SiC/TSC/SiC joining sample with bend strength of 80.4 MPa was obtained at a low joining temperature of 1300 °C within a total time of 15 min. Three simple failure mechanism models were established, and the failure mechanisms of the joints joined at different temperatures were then revealed. The element diffusion and phase transition behaviour in the joining interface were investigated.
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