Abstract
Metal silicides are the preferred contact materials for metal‐oxide semiconductor (MOS) structures. With further technology development, the materials changed within the last decades toward lower resistivity and lower thermal budget. Currently NiSi partly further stabilized with Pt or Pd is the material of choice. The understanding of phase transformation processes and structural features is of great importance for production process optimization. Here we present a fast laboratory‐based in situ X‐ray diffraction method with two different experimental arrangements (Bragg–Brentano and grazing incidence) optimized concerning the materials texture. Its application is demonstrated for the transformation of Ni to different Ni silicide phases starting with a 46 nm thick Ni layer sputtered on a Si(001) substrate and covered with TiN. Activation energies for the Ni to Ni2Si (1.55 ± 0.13) eV and the Ni2Si to NiSi transition (1.30 ± 0.15) eV are measured by repeating fast diffraction scans over a limited angular range under isothermal conditions and analyzing the diffraction peak height versus time.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
