Abstract
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rate and maintain the step-flow growth mode, wherein the enhanced diffusion channel due to the formation of a Ga adlayer was proposed to be the possible growth mechanism. Si doping allowed precise control of the n-type conductivity of the films with electron concentrations ranging from 1.5 × 1017 to 1.5 × 1019 cm−3 and corresponding mobilities from 144 to 21 cm2 V−1 s−1, as revealed by Hall effect measurements at room temperature. Secondary ion mass spectrometry confirmed homogeneous Si doping through the film and a one-to-one correlation between the Si concentration and the electron concentration. Low defect density in the films was determined by x-ray diffraction measurements. The demonstration of a high growth rate process of β-Ga2O3 films with μm level thickness and smooth surface morphology via MOVPE is critical for high power electronics with vertical device architecture.
Highlights
Among these techniques, metalorganic vapor phase epitaxy (MOVPE) is a preferred growth method for semiconductor device technologies at the industrial level
Smooth surface with rms values below 1.0 nm is reported in molecular beam epitaxy (MBE)-grown films for both (100)37 and (010)13,14 β-Ga2O3; the growth rate and the thickness of the grown film are usually limited
The improved stability of surface morphology during the growth can be related to the possible formation of a Ga adlayer on the growing surface, which has been widely reported for the GaN system
Summary
MOVPE is a preferred growth method for semiconductor device technologies at the industrial level.
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