Fast high-power/high-voltage switch using series-connected IGBTs with active gate-controlled voltage-balancing

C Gerster

doi:10.1109/apec.1994.316362

Fast high-power/high-voltage switch using series-connected IGBTs with active gate-controlled voltage-balancing

C Gerster

https://doi.org/10.1109/apec.1994.316362

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Publication Date: Feb 13, 1994

Citations: 96

Affiliation: École Polytechnique Fédérale de Lausanne

#Series-connected Insulated Gate Bipolar Transistors #Insulated Gate Bipolar Transistors + Show 8 more

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Abstract

There exists an acute need for fast high-voltage solid-state switches in a broad area of applications. With the proposed method of active gate-controlled voltage balancing, fast high power/high voltage semiconductor switches with working voltages of several kilovolts using series-connected insulated gate bipolar transistors (IGBT) can be realized. Transient and static voltage balancing is tested on an experimental 3.5 kV/300 A switch with three series-connected 3rd-generation IGBTs. >

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