Fast high-fidelity single-qubit gates for flip-flop qubits in silicon

Abstract

The flip-flop qubit, encoded in the states with antiparallel donor-bound electron and donor nuclear spins in silicon, showcases long coherence times, good controllability, and, in contrast to other donor-spin-based schemes, long-distance coupling. Electron spin control near the interface, however, is likely to shorten the relaxation time by many orders of magnitude, reducing the overall qubit quality factor. Here, we theoretically study the multilevel system that is formed by the interacting electron and nuclear spins and derive analytical effective two-level Hamiltonians with and without periodic driving. We then propose an optimal control scheme that produces fast and robust single-qubit gates in the presence of low-frequency noise without relying on parametrically restrictive sweet spots. This scheme increases considerably both the relaxation time and the qubit quality factor.