Abstract
The effect of fluorine incorporation on the growth kinetics of silicon oxidation in ambient was studied. The oxidation was done by using a conventional thermal furnace with 100 ppm addition to the oxidant. The growth kinetics of oxide was found to follow a power law model. The added enhances the oxidation rate of the gas process several times higher than without this addition. A low thermal budget oxidation process and high quality thin dielectrics is achievable by using the combined effects of fluorine added to ambient.
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