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Abstract
AbstractGaN‐based heterostructure lateral Schottky barrier diodes (SBD) grown on Si(111) substrate are presented in this work. These SBDs own very low onset‐voltage, VF = 0.50 V, high reverse blocking VBR > 600 V for LAC > 8 µm, very low capacitive charge of 0.415 nC/A and a very fast recovery time of 6 ps extracted under large signal operation conditions. These unique qualities are achieved by combining lateral topology, AlGaN back‐barrier epitaxial structure, fully recessed Schottky anode (ϕB = 0.62 eV) and anode field plate extension (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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