Fast falling time of fringe-field-switching negative dielectric anisotropy liquid crystal achieved by inserting vertical walls.

Abstract

We report a simulation result in which we obtained a faster falling time of the fringe-field-switching negative dielectric anisotropy liquid crystal (n-FFS) by segregating the subpixel area with vertical walls. By inserting walls near both edges of the interdigitated electrodes, the transmittance (TR) between the walls was increased by a large twist angle of the liquid crystal. The falling time of the n-FFS with 12 walls was 10.5 ms, about 50% less than the n-FFS without a wall (21.3 ms). The maximum TR (TR(max)) of the proposed n-FFS was 26.1%, which was slightly smaller than the TR(max) of the n-FFS without walls (27.8%) but still larger than the FFS with a positive dielectric anisotropy liquid crystal (p-FFS).