Abstract
In this work the possibility to increase markedly the electrodeposition rate of cadmium telluride has been investigated. After a theoretical analysis which has allowed to fix new electrodeposition conditions, based on an increase of the tellurium concentration, a complete experimental study has been carried out with varying the deposition parameters (composition, pH, potential, hydrodynamic regime). The films, deposited at rates up to 17 micron per hour, have been characterized before and after annealing. Results on cell formation with CdS show that junction formation occurs even for high deposition rates. Efficiencies around 6% (700 mV, 18.1 mA cm−2) have been obtained for films grown at 2.7 μm/h.
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