Abstract
Fast deposition of hydrogenated chlorinated amorphous and microcrystalline silicon (a-Si:H(Cl), µ c-Si:H(Cl)) thin films is achieved without powder formation and deterioration of their optoelectronic properties by plasma-enhanced chemical vapor deposition (rf PECVD) from SiH2Cl2– SiH4– H2. The Si-network can be varied from microcrystalline to amorphous at high deposition rate of about 20 Å/s with addition of SiH4 under steady flow of SiH2Cl2– H2 plasma. The deposition rate strongly depends on the mixture ratio of SiH2Cl2 and SiH4 and the substrate temperature.
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