Abstract

Static random-access memory (SRAM)-based ternary content-addressable memory (TCAM), an alternative to traditional TCAM, where inclusion of SRAM improves the memory access speed, scalability, cost, and storage density compared to conventional TCAM. In order to confidently use the SRAM-based TCAMs in application, an update module (UM) is essential. The UM replaces the old TCAM contents with fresh contents. This letter proposes a fast update mechanism for an SRAM-based TCAM and implements it on Xilinx Virtex-6 field-programmable gate array. To the best of authors’ knowledge, this is the first ever proposal on content-update-module in an SRAM-based TCAM, which consumes least possible clock cycles to update a TCAM word.

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