Abstract
Fast and stable zinc-tin-oxide (ZTO) thin-film transistor (TFT) circuits were fabricated by simple and effective solution processing. The solution-processed ZTO TFTs have shown saturation mobility >;2.5 ± 0.29 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V · s (W/L = 100/10 μm) and subthreshold slope <;0.4 ± 0.122 V/dec . The ZTO seven-stage ring oscillators have shown an oscillation frequency of 800 kHz with a supply voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> = 60 V, corresponding to a propagation delay of <; 90 ns per stage. In addition, with appropriate passivation onto the semiconductor channel area, the circuits have shown relatively stable operation even at a gate and source/drain bias voltage of >; 50 V for several hours.
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