Abstract
ABSTRACTThe photocurrent decay in n-type GaN films prepared by low-pressure chemical vapor deposition (LPCVD) was measured in the ms-to-s time range using steady-state UV light and in the μs time regime using short high-power pulses from higher harmonics of a Nd:YAG laser. A power law time dependence is observed with exponents ranging from −0.1 to −0.3, which is an indication of a broad distribution of trapping states inside the band gap. Combining Hall effect results and the magnitude of the initial slope of the photocurrent decay we estimate a mobility-lifetime product of 2.1×10−4 cm2/V for photogenerated electrons at times below a few μs. Slow transients might be a handicap for applications of GaN in UV detectors.
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