Abstract
Two groups of interface electrons, one of very high mobility (105 cm2 /V s), have been found in p-type Hg1−x Cdx Te of low band gap (x≤0.2) from studies of the Hall effect up to 50 kG. Both groups are associated with the growth interface. The number of electrons in each group changes rapidly with temperature down to 15 K, causing anomalies in the low-field Hall coefficient.
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