Fast and low-temperature reduction of graphene oxide films using ammonia plasma

Maeng Jun Kim,Jae-Hyung Jang,Sangho Sohn,Kwanghee Lee,Sung Yeup Lee,Yong Jae Kim,Yonkil Jeong,Yung Ho Kahng

doi:10.1063/1.4789545

Maeng Jun Kim, Jae-Hyung Jang + Show 6 more

Open Access

https://doi.org/10.1063/1.4789545

Copy DOI

Abstract

Reduced graphene oxide (rGO) has been produced using an ammonia (NH3) plasma reduction method. Simultaneous nitrogen doping during the reduction process enabled a rapid and low-temperature restoration of the electrical properties of the rGO. The chemical, structural, and electrical properties of the rGO films were analyzed using x-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, and conductivity measurements. The oxygen functional groups were efficiently removed, and simultaneous nitrogen doping (6%) was carried out. In addition, the surface of the rGO film was flattened. Consequently, the rGO films exhibited electrical properties comparable to those prepared via other reduction methods.

Highlights

Graphene possesses excellent morphological, mechanical, electrical and optical properties that enable its use in promising applications, such as transparent conductive electrodes,[1,2,3,4,5] nanoscale electronic devices, and optoelectronic devices.[6,7,8,9] the large-scale synthesis of high-quality graphene that retains these remarkable intrinsic physical properties remains a challenge
The epoxide and hydroxyl located on the basal plane of the graphene oxide (GO) are the primary components, and the carbonyl and carboxyl distributed at the edges of the GO are minor components.[15,16,17]
We report a fast and low-temperature reactive ion reduction process using ammonia plasma that can dope nitrogen during reduction to produce reduced graphene oxide (rGO) with excellent electrical characteristics

Summary

INTRODUCTION

Mechanical, electrical and optical properties that enable its use in promising applications, such as transparent conductive electrodes,[1,2,3,4,5] nanoscale electronic devices, and optoelectronic devices.[6,7,8,9] the large-scale synthesis of high-quality graphene that retains these remarkable intrinsic physical properties remains a challenge. The chemical reduction of graphene oxide (GO) is one promising route to achieve cost-effective, high-volume manufacturing of reduced graphene oxide (rGO).[10,11,12,13,14]. To achieve such chemical routes for rGO production, environmentally friendly and low-cost GO reduction processes are needed. The thermal reduction method requires a high process temperature of ∼900◦C,11,14 at which most substrates used in industrial applications will melt, even if the process time is only 30 minutes. We report a fast and low-temperature reactive ion reduction process using ammonia plasma that can dope nitrogen during reduction to produce rGO with excellent electrical characteristics

EXPERIMENTAL DETAILS

RESULTS AND DISCUSSION

CONCLUSION