Abstract
In this paper, we present an innovative and ultra-fast process for the deposition of high-quality graphene on different metal foils and thin metal films. The graphene layer can be homogeneously deposited in only 30 s process time. Due to the weak adhesion to the substrate material, the monolayer graphene is easy to transfer using the established processes. For the production, we use magnetic filtered high-current arc evaporation (Φ-HCA) with a solid, graphitic carbon source. This ultra-fast growth process can pave the way towards a cost-effective graphene synthesis for the mass production e.g., in a roll-to-roll process, avoiding time consuming established processes.
Highlights
Graphene, the monolayer modification of sp2 -hybridized carbon in a honeycomb lattice, has attracted strong interest as a new material for microelectronics, photonics, sensors, and many other applications [1]
This ultra-fast growth process can pave the way towards a cost-effective graphene synthesis for the mass production e.g., in a roll-to-roll process, avoiding time consuming established processes
The copper foil was firstly cleaned in acetone and isopropyl alcohol and subsequently treated by chemical polishing using a mixture of acetic acid, nitric acid, and sulfuric acid [19] for 5 min in order to remove the macroscopic roughness of the copper for better graphene transfer
Summary
The monolayer modification of sp2 -hybridized carbon in a honeycomb lattice, has attracted strong interest as a new material for microelectronics, photonics, sensors, and many other applications [1]. To introduce graphene into a broad industrial field, the deposition process must be stable, fast, and cost-effective to be suitable e.g., for a roll-to-roll technique. The most established method to fabricate large area monolayer graphene films is a CVD (chemical vapor deposition) or PE-CVD (Plasma enhanced CVD) process using carbon containing precursor gases like methane [2,3,4,5]. Using one of these processes, graphene grows on the surface of copper, nickel or other suitable metals with catalytic properties and exhibits high quality and cover large areas. The maximum reachable speed for producing high-quality closed graphene was reported to be 2 mm/s [7]
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