Fast and accurate proximity effect correction algorithm based on pattern edge shape adjustment for electron beam lithography

Abstract

This paper proposes a fast and accurate shape-based proximity effect correction (PEC) algorithm based on pattern edge shape adjustment (PESA) for electron beam lithography (EBL). By performing PEC calculations with three layout sizes (1 μm, 2 μm, and 4 μm) under three technology nodes (40 nm, 28 nm, and 14 nm), it is shown that the proposed PESA algorithm runs about 3–10 times faster than the traditional shape-based algorithm given that the mean square error (MSE) is less than 1%. The PESA's speed advantage is more obvious in more advanced technology node. Besides, PESA helps preventing fatal misconnection between local patterns in IC layouts. High stability and robustness of PESA algorithm are also demonstrated by the excellent convergence characteristics under different process critical dimensions (CD) and layout sizes. The proposed PESA algorithm has been integrated into the electronic design automation (EDA) tool for EBL -- “HNU-EBL” which is freely available at http://www.ebeam.com.cn.