Abstract
A fast, quasi-two-dimensional physical MODFET (modulation-doped field-effect transistor) model, capable of accurately simulating single-channel, multichannel, and pseudomorphic MODFETs, has been developed. It has been used to predict DC small-signal and large-signal microwave performance, and it has been applied to microwave and millimeter-wave device and circuit CAD (computer-aided design). The highly efficient physical device model presented allows the DC small-signal and large-signal microwave characteristics of planar and recessed gate HEMTs (high electron mobility transistors) to be obtained based on device geometry and process data. It is easily applied to a wide variety of HEMT structures, including pHEMT, AlGaAs-GaAs, and multichannel structures. This model is particularly useful for optimizing HEMT designs and for use in nonlinear circuit design. >
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