Abstract
Far-IR measurements by dispersive Fourier transform spectroscopy (DFTS) and attenuated total reflection (ATR) spectroscopy have been made on semiconductor samples consisting of epitaxial layers of CdTe on GaAs substrates. The two techniques have enabled all bulk and surface phonon modes and guided waves propagating in the system to be investigated. Both the CdTe and GaAs reststrahlen bands, which lie in well separated spectral regions, are observed by DFTS. ATR measurements have revealed a p polarized surface polariton in the CdTe restsrahlen band and both s and p polarized guided waves in the GaAs reststrahlen band. In each case the measured results are in good agreement with calculations based on standard multilayer optics techniques, and each technique provides a sensitive probe of the layer thickness.
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