Abstract
Experimental results of FIR ((nu) equals 85 - 142 cm<SUP>-1</SUP>) surface electromagnetic wave propagation in n-type semiconductors (InSb, GBaAs, InP) and ferroelectric films Ba<SUB>x</SUB>Sr<SUB>1-x</SUB>TiO<SUB>3</SUB> are presented. A technique for measuring the plasma frequency (nu) <SUB>p</SUB> and the damping constant of plasmons (gamma) (or the concentration and relaxation time of electrons) in doped semiconductors was designed. The SEW propagation distance dependence on electron concentration in GaAs has been obtained. The relationship between the SEW propagation distance L and the 'soft mode' parameters in ferroelectric films was found. In the L dependence on temperature the minimum was observed at T equals 380 K in Ba<SUB>x</SUB>Sr<SUB>1-x</SUB>TiO<SUB>3</SUB>, which is explained by the increase of dielectric losses tan (delta) in the film under phase transition.
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