Abstract
We report a far-infrared absorption study of internal transitions of shallow Be acceptors in both bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum well samples with well thicknesses of 20, 15 and 10 nm. Low temperature far-infrared absorp- tion measurements clearly show three principal absorption lines due to transitions of Be- acceptor states from the ground state to the first three odd-parity excited states, respec- tively. Using a variational principle, the 2p-1s transition energies of quantum confined Be acceptors are calculated as a function of the well width. It is found that the theoretical calculation of the 2pz → 1s transitions is in good agreement with the D-like line experi- mental data.
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