Abstract
Previous variational calculations of the ground and 2p-like excited states of a shallow donor in a quantum well are extended to include the effects of an applied magnetic field and arbitrary donor position. The extended wave functions are then used in a theory for the absorption profiles of shallow donor transitions in quantum wells. Absorption profiles for several donor-impurity distributions are calculated and compared with recent far-infrared absorption experiments. The comparison with experiment is somewhat ambiguous, but the theory does suggest that some experimental samples may possess thin donor-impurity layers at the interfaces between semiconductors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
