Abstract
GaAs is usually contaminated by carbon and zinc due to its growth conditions. Acting as shallow acceptors these substitutional impurities substantially determine the electrical and optical behaviour of this material. The authors measured the far infrared absorption spectra due to optical transitions of holes bound to these acceptors in LEC grown GaAs at T approximately=1.2 K, B<or=7 T and magnetic field directions B//(100), (110) and (111). They present the g-values of the 1S3/2 Gamma 8 ground state and, for the first time, the 2P3/2 Gamma 8 and the 2P5/2 Gamma 8 excited states. The authors use a graphical method to analyse the splitting of the levels mentioned earlier using only symmetry considerations.
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