Abstract
A series of InAsxSb1−x ternary thin films (x = 0-0.4) has been studied in a far-infrared reflection experiment over the range of 50-4000 cm−1 at room temperature. The obtained spectra are fitted using a multi-oscillator model. Two types of lattice vibration modes, InSb-like and InAs-like, plus one plasmon mode have been identified in x > 0 samples. The lattice vibration in these ternary alloy films shows a typical two-mode behavior. Within the studied fraction range, the InSb transverse-optical (TO) phonon frequency decreases with x, while the InAs TO frequency increases. A random-element-isodisplacement model has been employed to describe the phonon frequency changes. The fitted plasmon parameters have been used to extract the carrier concentrations and mobility. The carrier concentration increases monotonously with the increase of As fraction and is attributed to the bandgap narrowing effect. The mobility decreases with x, indicating an increased scattering.
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