Far infrared photoconductivity experiments on the si donor in gaas

A C Labrujere,W Th Wenckebach,T O Klaassen,C T Foxon

doi:10.1109/irmm.1987.9127018

Far infrared photoconductivity experiments on the si donor in gaas

A C Labrujere, W Th Wenckebach + Show 2 more

https://doi.org/10.1109/irmm.1987.9127018

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Publication Date: Dec 1, 1987

Affiliation: Huygens Institute for History and Culture of the Netherlands, Philips (United States)

#Si Donor #Shallow Si + Show 8 more

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Abstract

The far infrared photoconductivity of Si doped GaAs has been studied using an optically pumped FIR laser working in the 10-150 cm range. At temperatures between H and 10 K in magnetic fields up to 12 T an almost complete set of transitions from the shallow (Si) donor groundstate to the excited hydrogenic levels (n = 2,3,4) is observed. The obtained field dependence of the energy levels is in good agreement with theoretical calculations.

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