Abstract
We report a complete far-infrared investigation of shallow level centres in GaN. Transitions between the ground and excited states of shallow donors have been observed by means of transmission and far-infrared photoconductivity measurements — the latter for two configurations of the magnetic field relative to the crystal axis. The hitherto unobtainable high quality of the spectra allows, for the first time, a comparison with a theoretical model of shallow donors in a crystal with a wurtzite structure.
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