Abstract
We report on far-infrared transmission measurements of an antidot superlattice in a stacked-gate silicon MOS device. The electrons in this antidot system are electrostatically confined below the metallic mesh of the bottom gate. Sweeping the top gate voltage allows one to tune the electron system from a two-dimensional electron system to an antidot superlattice. The observed magnetic field dispersion of the electronic oscillations is in good agreement with a recently developed classical theory.
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