Abstract
Various Ti-based oxides were used as far-infrared (FIR) radiation sources. The temperature increases and emissivities of aluminum panels coated with these oxides were measured. To explain their different FIR emissivities, the electronic energy levels of these oxides were calculated using the direct-variational Xα molecular orbital method. Ti 2O 3 and TiO were found to be more effective materials as FIR sources than was TiO 2 in the wavelength range 3–7 μm. The wide band gap of TiO 2 is the cause of its relatively low emissivity.
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