Abstract
Far infrared detection utilizing the work functions associated with lightly and heavily doped semiconductor interfaces is analyzed. Experimental results obtained with a single interface p-i structure are reported. The detector response shows a strong bias dependence and also the cutoff wavelength (λ c) increases with increasing bias, which we attribute to the lowering of the work function barrier. This barrier lowering agrees with an empirical formula based on the doping profiles. Based on these results, multilayer structures are proposed. Estimates for layer thicknesses, concentrations and number of layers are provided for MBE grown multilayer structures. These structures should have an improved IR response with a possible gain through impact ionization. Another possible gain mechanism through initiation of an electron-phonon cascade is proposed.
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