Abstract
Far infrared cyclotron resonance measurements have been used to investigate the effective mass ( m*) in the strained silicon channel of modulation-doped, two dimensional electron gases grown on relaxed Si 1− x Ge x . Samples with germanium fractions from 24% to 31% were measured to investigate the influence of strain on m*. Little variation as a function of strain was observed, but for one sample, the resonance position was shifted up in frequency due to localisation effects. This persisted up to higher Landau level filling factors than has been observed previously in other materials systems and was accompanied by a large enhancement in the quantum lifetime.
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