Abstract
Previous variational calculations of the ground and 2p-like excited states of a shallow donor in a quantum well are extended to include the effects of an applied magnetic field and arbitrary donor position. The extended wave functions are then used in a theory for the absorption profiles of shallow donor transitions in quantum wells. Absorption profiles for several donor-impurity distributions are calculated and compared with recent far-infrared absorption experiments. The comparison with experiment is somewhat ambiguous, but the theory does suggest that some experimental samples may possess thin donor-impurity layers at the interfaces between semiconductors.
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