Abstract
Far infrared reflection spectra of amorphous GaAs and Ge have been obtained in the frequency region from 30–600 cm −1. For each material, curves of ωϵ 2 vs frequency have been obtained whose corresponding reflectivity curves give a best fit to the data. The peak value of the abdorption coefficient is about 4000 cm −1 for GaAs and 160 cm −1 for Ge. The results are compared with Raman spectra and with theoretical calculations.
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