Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulations

Abstract

This paper presents an exposition of some basic concepts relating to the thermodynamics and kinetics of semiconductor interface formation in vapour phase epitaxial growth under far from equilibrium conditions. Though many of the concepts discussed are of general validity, the discussion is motivated particularly by the special conditions and considerations of importance to molecular beam epitaxial (MBE) growth of interfaces between tetrahedrally bonded semiconductors. A brief overview of the existing basis for understanding near equilibrium growth from the vapour phase is followed by presentation of a conceptual framework for MBE growth. This coherent presentation unfolds several kinetic aspects and their finer considerations which may be expected to be of significance and require greater systematic attention. Based upon this conceptual picture, a simple model problem of the growth of an A x B 1− x C alloy (representing a pseudobinary III–V compound semiconductor such as Al x Ga 1− x As) on a lattice matched and C-terminated ideal (100) surface of BC is formulated and investigated via Monte-Carlo computer simulations. These idealized studies reveal considerable richness of the phenomena and set the stage for ongoing systematic Monte-Carlo computer simulations of the role of such parameters as substrate orientation and surface geometry, point defects and impurities, the surface migration kinetics, etc. in MBE growth.