Abstract
The authors have optimised the layer structure of 980 nm Al-free InGaAs/GaInAsP/GaInP SCH-QW lasers to have narrow vertical far-field pattern, high efficiency and low loss for power operation. It has been found that the internal loss decreases with any increase in the bandgap of the GaInAsP confinement layers, any the internal quantum efficiency has a maximum value for the GaInAsP having a bandgap of /spl sim/1.7 eV. It is indicated that the laser structure, having a single quantum well and 200 nm thick GaInAsP confinement layers, is the best choice for high power operation based on the narrow vertical far-field angle, high efficiency and low loss.
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