Abstract
This paper discusses the universal calculation method for space proton induced failure rate on high power device. High energetic particles can be the reason of power device failure in both terrestrial and space. T-CAD simulation result gives a threshold charge value for the device destruction which is triggered by energetic proton from space. The amount of threshold charge depends on applied voltage for high power device. The probability of charge generation in silicon due to proton penetration is considered as well. This probability function variation depends on the thickness of device and incident energy of proton which studied before at there. Last consideration on this paper is 3.3kV PiN diode's Single Event Upset Cross section and failure rate which was calculated by proposed method in Low earth orbit environment condition.
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