Failure mode and lifetime evaluation of 808nm high power semiconductor laser bars

Abstract

High Power Semiconductor Laser is widely used in areas such as pump lasers, laser medication and laser processing due to its high conversion efficiency, good working stability, compact volume and simple driving requirements. With the continuous upgrading of applications, technological progress and improving of the process, the requirement of the reliability of high-power semiconductor lasers are getting higher and higher. Aiming at the reliability problem of 808 nm high-power semiconductor laser bars, the constant current stress acceleration life test is used to predict the lifetime, and the failure mode of laser bars is analyzed in this paper. The current acceleration stresses are 30 A, 35 A and 40 A, respectively. The output power of the laser bars at different aging stages are tested, and the degradation characteristics are studied. The result show that power degradation of the laser bars is mainly caused by cavity facet contamination and catastrophic optical damage. By processing the test data, the life value of the device at 25 A operating current is predicted to be 1361 hours.